Cover of Castellazzi Alberto Castellazzi (EDT), Irace Andrea Irace (EDT): SiC Power Module Design

Castellazzi Alberto Castellazzi (EDT), Irace Andrea Irace (EDT) SiC Power Module Design

Performance, robustness and reliability

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The Institution of Engineering and Technology

2021

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978-1-78561-908-3

1-78561-908-X

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High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.

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